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InGaAs linear image sensors
G9211 to G9214 series G9205 to G9208 series
Near infrared image sensors (0.9 to 1.67 m / 2.55 m)
The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near infrared spectral range. The package is hermetically sealed for high reliability. Signal processing circuits on the CMOS chip can be selected from two conversion efficiencies (CE) by external voltage. The image sensor operates over a wide dynamic range when CE=16 nV/e- and delivers high gain when CE=320 nV/e-.
Features
Wide dynamic range Low noise and low dark current Two selectable conversion efficiencies Anti-saturation circuit CDS circuit *1 Offset compensation circuit Simple operation (by built-in timing generator) High resolution: 25 m pitch (512 ch) Low cross-talk 256 ch: 1 video line 512 ch: 2 video lines *2
Applications
Near infrared multichannel spectrophotometry Radiation thermometry Non-destructive inspection
Related products
InGaAs multichannel detector head C8061-01, C8062-01 Multichannel detector head controller C7557
*1: A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. A CDS (correlated double sampling) circuit greatly reduces this reset noise by holding the signal immediately after reset to find the noise differential. *2: Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, external PLDs (programmable logic device) are used to input the required timing signals. However, the G9211 to G9214/G9205 to G9208 series image sensors internally generate all timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the timings.
www.hamamatsu.com
1
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
Selection guide
Type No. Cooling Number of pixels 256 512 256 512 256 Pixel pitch (m) 50 25 50 25 50 Pixel size [m (H) x m (V)] 50 25 50 25 x x x x 250 250 500 500 Spectral response range (m) 0.9 to 1.67 (-10 C) 0.9 0.9 0.9 0.9 to to to to 1.85 2.05 2.25 2.55 (-20 (-20 (-20 (-20 C) C) C) C) Defective pixel
G9211-256S G9212-512S One-stage TE-cooled G9213-256S G9214-512S G9205-256W G9206-256W Two-stage TE-cooled G9207-256W G9208-256W *3: If your application requires sensors with no
1 % Max. *3
50 x 250
5 % Max.
defective pixels, please select G9201 series.
Absolute maximum ratings
Parameter Clock pulse voltage Operating temperature *4 Storage temperature *4 *4: Non condensation Symbol V Topr Tstg Value 5.5 -40 to +70 -40 to +85 Unit V C C
Electrical characteristics (Ta=25 C, V=5 V )
Parameter Supply voltage Supply current Ground Element bias Element bias current Clock frequency Clock pulse voltage Clock pulse rise time Clock pulse fall time Clock pulse width Reset pulse voltage Reset pulse rise time Reset pulse fall time Reset pulse width Video output voltage Video data rate High Low High Low High Low Symbol Vdd Vref 256 ch I(Vdd) 512 ch I(Vref) Vss INP I(INP) f V tr tf tpw V(RES) tr(RES) tf(RES) tpw(RES) VH VL fv Min. 4.9 3.5 0.1 V - 0.5 0 0 100 V - 0.5 0 0 6000 0 Typ. 5.0 1.26 45 90 0 4.5 V 0 20 V 0 20 4.5 1.26 f/8 Max. 5.1 50 100 1 4.6 1 4 V + 0.5 0.4 100 V + 0.5 0.4 100 Unit V mA mA V V mA MHz V V ns ns V V ns ns V Hz
Spectral response
1.5 T=25 C T= -10 C T= -20 C G9207-256W G9208-256W (Typ.)
PHOTO SENSITIVITY (A/W)
G9201 TO G9204 SERIES G9211 TO 1.0 G9214 SERIES G9414 SERIES G9205-256W 0.5
G9206-256W
0 0.5
1.0
1.5
2.0
2.5
3.0
WAVELENGTH (m)
KMIRB0033EC
2
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
Electrical and optical characteristics (G9211 to G9214 series: T=25 C, G9205 to G9208 series: T=-20 C)
Parameter Symbol G9211 to G9214 series Min. Typ. Max. 1.55 30 180 300 5 *6 G9205 G9206 G9207 G9208 G9205 to G9208 series Min. Typ. 1.75 1.95 2.05 2.3 30 180 Max. 300 10 *7 Unit
Peak sensitivity wavelength Saturation charge *5 RMS noise voltage (Readout noise) Photo response non-uniformity *5: V=5 V, CE=16 nV/e-
p Qsat N PRNU
m pC V rms %
*6: 50 % of saturation, integration time: 10 ms, after dark output subtraction, excluding first and last pixels *7: 50 % of saturation, integration time: 3 ms, after dark output subtraction, excluding first and last pixels
Dark current characteristics (T=25 C)
Parameter G9211-256S G9212-512S G9213-256S G9214-512S G9205-256W G9206-256W G9207-256W G9208-256W Symbol Min. Typ. 2 1 4 1 15 30 200 500 Max. 10 5 20 5 60 120 800 2000 Unit
*5 *5 *5 *5
ID
pA
*5: TD=-20 C
Equivalent circuit
1 pixel
High gain Low gain Shift register
CDS Photodiode
Offset compensation
VIDEO
AD-TRIG Timing generator
Vdd
INP Vss
CLK
RESET
Vref
External input
KMIRC0010EC
3
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
Timing chart
CLK (INPUT)
RESET (INPUT) Integration time 2 clocks 8 clocks 8 clocks 8 x N clocks (Readout time) 10 clocks Min.
TRIGGER (OUTPUT) VIDEO (OUTPUT)
1 ch
2 ch
(n-1) ch
n ch
KMIRC0016EA
Connection example
CLK RESET Vref Vdd Cf SELECT INP Vss VIDEO AD-TRIG Buffer InGaAs linear image sensor Buffer
KMIRC0012EA
Dimensional outline (unit: mm)
63.5 0.15 53.3 0.15 38.1 0.15 35.6 0.15 28 3.0 0.15 27.2 0.15 20.3 0.15 12 Index mark 14 15
25.4 0.15
22.9 0.15
10.2 0.15
A
A B 1.0 0.2 6.4 1 One-stage TE-cooled Two-stage TE-cooled (28 x) 2.54 (28 x) 0.46 7.25
B 4.5
6.15 3.6
KMIRA0011EA
4
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
Pin connection (top view)
256 PIXELS 512 PIXELS
TE + THERM THERM CASE
Cf SELECT RESET TE AD-TRIG Vdd Vss INP CLK Vref VIDEO
RESET-EVEN TE + AD-TRIG-EVEN THERM THERM CASE CLK-EVEN
Cf SELECT RESET-ODD TE AD-TRIG-ODD Vdd Vss INP CLK-ODD Vref
VIDEO-EVEN
VIDEO-ODD
KMIRC0013EA
Terminal name CLK RESET Vdd Vss INP Cf SELECT CASE THERM TE+, TEAD-TRIG VIDEO Vref
Input/Output Input (CMOS logic compatible) Input (CMOS logic compatible) Input Input Input Input Output Input Output Output Input
Function and recommended connection Clock pulse for operating the CMOS shift register Reset pulse for initializing the feedback capacitance in the charge amplifier formed in the CMOS chip. The width of the reset pulse is integration time. Supply voltage for operating the signal processing circuit in the CMOS chip Ground for the signal processing circuit in the CMOS chip Reset voltage for the charge amplifier array in the CMOS chip Voltage that determines the conversion efficiency in the CMOS chip. Low gain (CE=16 nV/e-) at 0 V, and high gain (CE=320 nV/e-) at 5 V. This terminal is electrically connected to the package. Thermistor for monitoring temperature inside the package Power supply terminal for the thermoelectric cooler that cools the photodiode array. No connection for room temperature operation type. Digital signal for AD conversion; positive polarity Analog video signal; positive polarity Reset voltage for the offset compensation circuit in the CMOS chip
Specifications of TE-cooler (Ta=25 C, Vdd=5 V, INP=4.5 V)
Parameter TE-cooler allowable current TE-cooler allowable voltage Temperature difference *6 Thermistor resistance Thermistor power dissipation Condition Symbol Ic Max. Vc Max. t Rth Pth One-stage TE-cooler Min. Typ. Max. 1.8 5.0 40 4.85 5.00 5.15 0.2 Two-stage TE-cooler Min. Typ. Max. 2.8 4.0 50 4.85 5.00 5.15 0.2 Unit A V C k mW
*7
*6: This is a temperature difference between the surface of active area and the heat radiating portion of package. *7: One-stage thermoelectrically cooled type: Ic=1.4 A, two-stage thermoelectrically cooled type: Ic=2.6 A.
5
InGaAs linear image sensors
G9211 to G9214/G9205 to G9208 Series
TE-cooler temperature characteristics
One-stgae TE-cooler
6 (Typ. Ta=25 C, Heatsink 0.5 C/W) Allowable voltage Temperature difference 5 50 5 60 6
Two-stgae TE-cooler
(Typ. Ta=25 C, Heatsink 0.4 C/W) Allowable voltage Temperature difference 50 60
Temperature difference (C)
4
40
4
40
3
30
3
30
2
20
2
20
1
10
1
10
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0 1.8
0 0 1 2 3
0
Allowable current (A)
KMIRB0031EA
Allowable current (A)
KMIRB0032EA
Thermistor temperature characteristic
105
Connection of related products
Shutter *1 timing pulse
THERMISTOR RESISTANCE ()
Trig.
POWER
Dedicated cable (Included with the C7557)
SIGNAL I/O
SCSI *2 cable
TE CONTROL I/O
104 A relation between the thermistor resistance and absolute temperature is expressed by the following equation. R1=R2 x exp B (1/T1-1/T2) R1: Resistance at T1 (K) R2: Resistance at T2 (K) B : B constant (B=3200 K 2 %) 5 k 3 % at 298 K 250 260 270 280 290 300
InGaAs linear image sensor + Multichannel detector head C8061-01 (One-stage TE-cooled type) C8062-01 (Two-stage TE-cooled type) C7557 PC (Windows98/ME) (Integrated SCSI board)
*1: Shutter, etc. are not available. *2: SCSI cable and SCSI board (card) are not supplied with the C7557.
KACCC0401EA
103 240
TEMPERATURE (K)
KMIRB0041EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2008 Hamamatsu Photonics K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Temperature difference (C)
Allowable voltage (V)
Allowable voltage (V)
Cat. No. KMIR1011E06 May 2008 DN
6

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